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| Datasheet File OCR Text: |
| PROCESS General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip CPD06 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 87 x 87 MILS 10.4 MILS 69.5 x 69.5 MILS Au - 5,000A Au - 2,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5400 thru 1N5408 1N5550 thru 1N5554 1N5624 thru 1N5627 CMR3-02 Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (16- September 2003) Central TM PROCESS CPD06 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (16-September 2003) |
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